Si4539ADY Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) N-Channel 30 0.036 at VGS = 10 V 0.053 at VGS = 4.5 V P-Channel - 30 0.053 at VGS = - 10 V 0.090 at VGS = - 4.5 V ID (A) 5.9 4.9 - 4.9 - 3.7 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Compliant to RoHS .
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFETs
• Compliant to RoHS Directive 2002/95/EC
D1 S2
S1 1 G1 2 S2 3 G2 4
SO-8
8 D1 7 D1 6 D2 5 D2
Top View
Ordering Information: Si4539ADY-T1-E3 (Lead (Pb)-free) Si4539ADY-T1-GE3 (Lead (Pb)-free and Halogen-free)
G2 G1
S1 N-Channel MOSFET
D2 P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
N-Channel
P-Channel
Parameter
Symbol
10 s Steady State 10 s Steady State
Drain-Source Voltage
VDS 30
- 30
Gate-Source Voltage
VGS
± 20
± 20
Continuous Drain Current (TJ = 150 °C)a
TA .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | Si4532ADY |
Vishay |
N- and P-Channel MOSFET | |
2 | SI4532CDY |
Vishay |
MOSFET | |
3 | SI4532DY |
Vishay Siliconix |
N- and P-Channel 30-V MOSFET | |
4 | Si4532DY |
ON Semiconductor |
Dual N- and P-Channel FET | |
5 | Si4532DY |
Fairchild Semiconductor |
Dual N- and P-Channel FET | |
6 | SI4500BDY |
Vishay Siliconix |
Complementary MOSFET | |
7 | SI4500DY |
Vishay Siliconix |
Complementary MOSFET | |
8 | SI4501ADY |
Vishay Siliconix |
Complementary MOSFET | |
9 | SI4501BD |
Vishay |
MOSFET | |
10 | Si4501BDY |
Vishay |
Complementary (N- and P-Channel) MOSFET | |
11 | SI4501DY |
Vishay Siliconix |
Complementary MOSFET | |
12 | SI4505DY |
Vishay Siliconix |
MOSFET |