New Product Dual N-Channel 25 V (D-S) MOSFET Si4228DY Vishay Siliconix # PRODUCT SUMMARY VDS (V) 25 RDS(on) (Ω) 0.018 at VGS = 10 V 0.020 at VGS = 4.5 V 0.024 at VGS = 2.5 V ID (A)a, e 8 8 7.5 Qg (Typ.) 7.8 nC S1 1 G1 2 S2 3 G2 4 SO-8 Top View 8 D1 7 D1 6 D2 5 D2 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOS.
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Synchronous Buck Converter
• DC/DC Converter
D1
D2
G1 G2
Ordering Information: Si4228DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C TA = 70 °C
ID
Pulsed Drain Current
IDM
Continuous Source-Drain Diode Current
Single Pulse .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | Si4200-G-GM |
Silicon Laboratories |
TRANSCEIVER | |
2 | Si4200DB-BM |
Silicon Laboratories |
TRANSCEIVER | |
3 | SI4200DY |
Vishay Siliconix |
Dual N-Channel MOSFET | |
4 | Si4201-BM |
Silicon Laboratories |
TRANSCEIVER | |
5 | SI4202DY |
Vishay Siliconix |
Dual N-Channel MOSFET | |
6 | SI4204DY |
Vishay Siliconix |
Dual N-Channel MOSFET | |
7 | SI4209 |
Silicon Laboratories |
Transceiver | |
8 | SI4210DY |
Vishay Siliconix |
Dual N-Channel MOSFET | |
9 | SI4212 |
Silicon |
Aero IIe Transceiver | |
10 | SI4214DDY |
Vishay Siliconix |
Dual N-Channel MOSFET | |
11 | Si4214DY |
Vishay |
Dual N-Channel 30-V (D-S) MOSFET | |
12 | SI426DQ |
Vishay Siliconix |
N-Channel 2.5-V (G-S) Rated MOSFET |