SI4200DY - Vishay Siliconix

SI4200DY Dual N-Channel MOSFET

www.DataSheet.co.kr Si4200DY Vishay Siliconix Dual N-Channel 25 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 25 RDS(on) (Ω) 0.025 at VGS = 10 V 0.030 at VGS = 4.5 V ID (A) 8a 7.9 Qg (Typ.) 3.6 nC FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Gen III Power MOSFET • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Convert.

Features

• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Gen III Power MOSFET
• Compliant to RoHS Directive 2002/95/EC APPLICATIONS
• DC/DC Converter - Game Console - Notebook System Power 8 7 6 5 Top View S1 S2 N-Channel MOSFET D1 D1 D2 D2 G1 G2 D1 D2 SO-8 S1 G1 S2 G2 1 2 3 4 Ordering Information: Si4200DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (.