SI4210DY - Vishay Siliconix

SI4210DY Dual N-Channel MOSFET

www.DataSheet.co.kr New Product Si4210DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.0355 at VGS = 10 V 0.044 at VGS = 4.5 V ID (A) 6.5 5.8 3.7 nC Qg (Typ.) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % UIS Tested • 100 % Rg Tested • Compliant to RoHS Direc.

Features

• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• 100 % UIS Tested
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC APPLICATIONS SO-8 S1 G1 S2 G2 1 2 3 4 Top View 8 7 6 5 D1 D1 D2 D2
• Set Top Box
• Low Current DC/DC D1 D2 G1 G2 S1 Ordering Information: Si4210DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Diode Current .