New Product Si4136DY Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.002 at VGS = 10 V 0.0025 at VGS = 4.5 V ID (A)a 46 41 Qg (Typ.) 34 nC FEATURES • Halogen-free According to IEC 61249-2-21 • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested APPLICATIONS • OR-ing • DC/DC SO-8 D S S S G 1 2 3 4 Top View S Ordering .
• Halogen-free According to IEC 61249-2-21
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
APPLICATIONS
• OR-ing
• DC/DC
SO-8
D S S S G 1 2 3 4 Top View S Ordering Information: Si4136DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET 8 7 6 5 D D D D G
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
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Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
Symbol VDS VGS ID IDM IS IAS E.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SI4136 |
Silicon Laboratories |
ISM RF SYNTHESIZER | |
2 | Si4133 |
Skyworks |
DUAL-BAND RF SYNTHESIZER | |
3 | SI4133 |
Silicon Laboratories |
DUAL-BAND RF SYNTHESIZER | |
4 | SI4133G |
Silicon Laboratories |
DUAL-BAND RF SYNTHESIZER | |
5 | Si4133T-BM |
Silicon Laboratories |
TRANSCEIVER | |
6 | SI4133W |
Silicon Laboratories |
RF SYNTHESIZER | |
7 | SI4134DY |
Vishay |
N-Channel MOSFET | |
8 | SI4100DY |
Vishay Siliconix |
N-Channel MOSFET | |
9 | Si4101DY |
Vishay |
P-Channel 30 V (D-S) MOSFET | |
10 | SI4102DY |
Vishay Siliconix |
N-Channel MOSFET | |
11 | SI4104DY |
Vishay Siliconix |
N-Channel MOSFET | |
12 | SI4108DY |
Vishay Siliconix |
N-Channel MOSFET |