SI4134DY - Vishay

SI4134DY N-Channel MOSFET

www.vishay.com Si4134DY Vishay Siliconix N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) MAX. 0.0140 at VGS = 10 V 0.0175 at VGS = 4.5 V ID (A) a 14 12.5 Qg (TYP.) 7.3 nC SO-8 Single D D5 D6 D7 8 FEATURES • TrenchFET® power MOSFET • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.v.

Features

• TrenchFET® power MOSFET
• 100 % Rg and UIS tested
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Available APPLICATIONS
• DC/DC conversion - Notebook system power D 4 3G 2S 1S S Top View Ordering Information: Si4134DY-T1-E3 (lead (Pb)-free) Si4134DY-T1-GE3 (lead (Pb)-free and halogen-free) G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage TC = 25 °C VDS VGS Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C ID Pulsed D.