www.DataSheet.co.kr New Product Si4114DY Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.006 at VGS = 10 V 0.007 at VGS = 4.5 V ID (A)a 20e 20e Qg (Typ.) 27.5 nC FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC.
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
SO-8
S S S G 1 2 3 4 Top View S 8 7 6 5 D D D D G
• Low-Side MOSFET for Synchronous Buck - Game Machine - PC D
Ordering Information: Si4114DY-T1-E3 (Lead (Pb)-free) Si4114DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SI4110DY |
Vishay Siliconix |
N-Channel MOSFET | |
2 | SI4112 |
Silicon Laboratories |
DUAL-BAND RF SYNTHESIZER | |
3 | Si4112 |
Skyworks |
DUAL-BAND RF SYNTHESIZER | |
4 | SI4112G |
Silicon Laboratories |
DUAL-BAND RF SYNTHESIZER | |
5 | Si4113 |
Skyworks |
DUAL-BAND RF SYNTHESIZER | |
6 | SI4113 |
Silicon Laboratories |
DUAL-BAND RF SYNTHESIZER | |
7 | SI4113G |
Silicon Laboratories |
DUAL-BAND RF SYNTHESIZER | |
8 | SI4116DY |
Vishay Siliconix |
N-Channel MOSFET | |
9 | SI4100DY |
Vishay Siliconix |
N-Channel MOSFET | |
10 | Si4101DY |
Vishay |
P-Channel 30 V (D-S) MOSFET | |
11 | SI4102DY |
Vishay Siliconix |
N-Channel MOSFET | |
12 | SI4104DY |
Vishay Siliconix |
N-Channel MOSFET |