SI4110DY - Vishay Siliconix

SI4110DY N-Channel MOSFET

www.DataSheet.co.kr New Product Si4110DY Vishay Siliconix N-Channel 80-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 80 RDS(on) (Ω) 0.013 at VGS = 10 V ID (A)a 17.3 Qg (Typ.) 35 nC FEATURES • • • • Halogen-free TrenchFET® Power MOSFET 100 % Rg Tested 100 % UIS Tested RoHS COMPLIANT APPLICATIONS SO-8 S S S G 1 2 3 4 Top View S 8 7 6 5 D D D D G • Primary Sid.

Features

•
•
•
• Halogen-free TrenchFET® Power MOSFET 100 % Rg Tested 100 % UIS Tested RoHS COMPLIANT APPLICATIONS SO-8 S S S G 1 2 3 4 Top View S 8 7 6 5 D D D D G
• Primary Side Switch
• Half Bridge
• Intermediate Bus Converter D Ordering Information: Si4110DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS.