SI2309 - CCSemi

SI2309 P-Channel 60-V(D-S) MOSFET

MOSFET P-Channel 60-V(D-S) MOSFET SI2309 Features ◆ TrenchFET Power MOSFET ◆ RoHS Compliant Absolute Maximum Ratings Ta=25℃ Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current(TJ=150℃) *1,2 TA=25℃ TA=100℃ VGS ID Pulsed Drain Current IDM Avalanche Current Power Dissipation*1,2 L = 0.1 mH TA=25℃ TA=70℃ IAS PD Ope.

Features

◆ TrenchFET Power MOSFET ◆ RoHS Compliant Absolute Maximum Ratings Ta=25℃ Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current(TJ=150℃)
*1,2 TA=25℃ TA=100℃ VGS ID Pulsed Drain Current IDM Avalanche Current Power Dissipation
*1,2 L = 0.1 mH TA=25℃ TA=70℃ IAS PD Operating Junction and Storage Temperature Range Tj.Tstg Maximum Junction-to-Ambient
*2 RthJA Maximum Junction-to-Ambient
*3
*1. Pulse Width limited by maximum junction temperature.
*2. Surface Mounted on FR4 Board, t≤5sec.
*3. Surface Mounted on FR4 Board. Rating -60 ±20 -1.25 -0.85 -8 -.