N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology Product availability: SI2304DS in SOT23. 2. Features s TrenchMOS™ technology s Very fast switching s Subminiature surface mount package. 3. Applications s Battery management s High speed switch s Low power DC to DC converter. 4. Pinning information Table 1:.
s TrenchMOS™ technology s Very fast switching s Subminiature surface mount package. 3. Applications s Battery management s High speed switch s Low power DC to DC converter. 4. Pinning information Table 1: Pin 1 2 3 Pinning - SOT23, simplified outline and symbol Description gate (g) source (s) drain (d) g 1 Top view 2 MSB003 MBB076 Simplified outline 3 Symbol d s SOT23 1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V. Philips Semiconductors SI2304DS N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference .
N-Channel 30-V (D-S) MOSFET Si2304DS Vishay Siliconix PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.117 @ VGS = 10 V 0.19.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SI2304DDS |
Vishay |
N-Channel MOSFET | |
2 | Si2304 |
SiPU |
N-Channel Enhancement Mode Field Effect Transistor | |
3 | SI2304 |
MCC |
N-channel FET | |
4 | SI2304 |
PUOLOP |
30V N-Channel Enhancement Mode MOSFET | |
5 | Si2304BDS |
Vishay |
N-channel MOSFET | |
6 | SI2300 |
Kexin |
N-Channel MOSFET | |
7 | SI2300 |
HAOCHANG |
N-Channel MOSFET | |
8 | SI2300 |
CCSemi |
N-Channel MOSFET | |
9 | SI2300 |
HOTTECH |
Plastic-Encapsulate Mosfets | |
10 | SI2300 |
MCC |
N-Channel MOSFET | |
11 | Si2300 |
SiPU |
N-Channel MOSFET | |
12 | SI2300 |
JinYu |
20V N-Channel MOSFET |