SI2304DDS - Vishay

SI2304DDS N-Channel MOSFET

New Product N-Channel 30-V (D-S) MOSFET Si2304DDS Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.060 at VGS = 10 V 30 0.075 at VGS = 4.5 V ID (A)a 3.6 3.6 Qg (Typ.) 2.1 nC FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Con.

Features

• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC APPLICATIONS
• DC/DC Converter TO-236 (SOT-23) G1 S2 3D Top View Si2304DDS (P4)
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* Marking Code Ordering Information: Si2304DDS-T1-GE3 (Lead (Pb)-free and Halogen-free) D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Source-Drain Diode Curr.