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Si2301DS Vishay Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) 0.130 @ VGS = - 4.5 V 0.190 @ VGS = - 2.5 V ID (A) - 2.3 - 1.9 TO-236 (SOT-23) G 1 3 D Ordering Information: Si2301DS-T1 S 2 Top View Si2301DS (A1)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltag.
www.vishay.com/www/product/spice.htm Document Number: 70627 S-31990—Rev. E, 13-Oct-03 www.vishay.com RthJA Symbol Limit 100 166 Unit _C/W 1 Si2301DS Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0 V, ID = - 250 mA VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "8 V VDS = - 20 V, VGS = 0 V VDS = - 20 V, VGS = 0 V, TJ = 55_C VDS v - 5 V, VGS = - 4.5 V VDS v - 5 V, VGS = - 2.5 V VGS = - 4.5 V, ID = - 2.8 A VGS = - 2.5.
SI2301DS - TEMIC
P-Channel 1.25-W, 2.5-V Rated MOSFET Product Summary VDS (V) –12 rDS(on) (W) 0.130 @ VGS = –4.5 V 0.190 @ VGS = –2.5 .
SI2301DS - Kexin
SMD Type P-Channel Enhancement MOSFET SI2301DS (KI2301DS) MOSFET ■ Features ● VDS (V) =-20V ● RDS(ON) ＜ 100mΩ (VGS =-.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SI2301DS-HF |
Kexin |
P-Channel MOSFET |
|
| 2 | SI2301 |
JinYu |
P-Channel MOSFET |
|
| 3 | SI2301 |
YANGJING |
P-Channel MOSFET |
|
| 4 | SI2301 |
MCC |
P-Channel Enhancement Mode Field Effect Transistor |
|
| 5 | SI2301 |
BLUE ROCKET ELECTRONICS |
P-CHANNEL MOSFET |
|
| 6 | SI2301 |
Kexin |
P-Channel MOSFET |
|
| 7 | Si2301 |
SiPU |
P-Channel MOSFET |
|
| 8 | SI2301A |
MCC |
P-Channel MOSFET |
|
| 9 | SI2301ADS |
Vishay |
P-Channel MOSFET |
|
| 10 | SI2301B |
UMW |
P-Channel MOSFET |
|
| 11 | Si2301BD |
Vishay Siliconix |
P-Channel MOSFET |
|
| 12 | SI2301BDS |
Vishay Siliconix |
P-Channel MOSFET |
|