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Si2301DS |
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| Part Number | Si2301DS |
| Manufacturer | TEMIC |
| Description | P-Channel 1.25-W, 2.5-V Rated MOSFET Product Summary VDS (V) –12 rDS(on) (W) 0.130 @ VGS = –4.5 V 0.190 @ VGS = –2.5 V ID (A) –2.3 –1.9 Si2301DS TO-236 (SOT-23) G1 S2 3D Top View Si2301DS (A1... |
| Features |
Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70627.
Siliconix S-51354—Rev. B, 11-Dec-96
4-1
Si2301DS
Specificationsa
Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentc
Drain-Source On-Resistancec Forward Transconductancec Diode Forward Voltage Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switchingd
Turn-On Time
Turn-Off Time
Symbol
Test Conditions
V(BR)DSS VGS(th)
IGSS IDSS
ID(on)
rDS(o... |
| Document |
 Si2301DS Data Sheet
PDF 56.92KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SI2301DS |
Vishay Siliconix |
P-Channel MOSFET |
|
| 2 | SI2301DS |
Kexin |
P-Channel MOSFET |
|
| 3 | SI2301DS-HF |
Kexin |
P-Channel MOSFET |
|
| 4 | SI2301 |
JinYu |
P-Channel MOSFET |
|
| 5 | SI2301 |
YANGJING |
P-Channel MOSFET |
|