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Si1555DL Vishay Siliconix Complementary Low-Threshold MOSFET Pair PRODUCT SUMMARY VDS (V) RDS(on) () N-Channel 20 0.385 at VGS = 4.5 V 0.630 at VGS = 2.5 V 0.600 at VGS = - 4.5 V P-Channel -8 0.850 at VGS = - 2.5 V 1.200 at VGS = - 1.8 V ID (A) 0.70 0.54 - 0.60 - 0.50 - 0.42 FEATURES • TrenchFET® Power MOSFET • Material categorization: For defi.
• TrenchFET® Power MOSFET
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
SOT-363 SC-70 (6-LEADS)
S1 1 G1 2 D2 3
6 D1 5 G2 4 S2
Top View
Marking Code
YY
RB XX
Lot Traceability and Date Code
Part # Code
Ordering Information: Si1555DL-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
N-Channel
P-Channel
Parameter
Symbol
5 s Steady State 5 s Steady State
Drain-Source Voltage
VDS 20
-8
Gate-Source Voltage
VGS
± 12
±8
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 85 °.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SI1551DL |
Vishay Siliconix |
MOSFET |
|
| 2 | SI1553CDL |
Vishay |
N- and P-Channel 20 V (D-S) MOSFET |
|
| 3 | SI1553DL |
Vishay |
Complementary 2.5-V (G-S) MOSFET |
|
| 4 | SI1557DH |
Vishay |
N- and P-Channel 1.8-V (G-S) MOSFET |
|
| 5 | SI1501DL |
Vishay Siliconix |
MOSFET |
|
| 6 | SI1539CDL |
Vishay |
N- and P-Channel 30 V (D-S) MOSFET |
|
| 7 | SI1539DDL |
Vishay |
MOSFET |
|
| 8 | SI1539DL |
Vishay |
Complementary 30-V (D-S) MOSFET |
|
| 9 | SI1563DH |
Vishay Siliconix |
Complementary 20-V (D-S) Low-Threshold MOSFET |
|
| 10 | SI1563EDH |
Vishay Siliconix |
Complementary 20-V (D-S) Low-Threshold MOSFET |
|
| 11 | SI1000 |
NTE Electronics |
(SI Series) SNAP-IN MOUNT ALUMINUM ELECTROLYTIC |
|
| 12 | Si1000 |
Silicon Laboratories |
10-Bit ADC MCU |
|