www.vishay.com Si1539DDL Vishay Siliconix N- and P-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel -30 RDS(on) (Ω) Max. 0.388 at VGS = 10 V 0.525 at VGS = 4.5 V 1.070 at VGS = -10 V 2.590 at VGS = -5 V ID (A) a 0.7 0.6 -0.5 -0.3 Qg (TYP.) 0.55 0.8 SOT-363 SC-70 Dual (6 leads) S2 G2 4 D1 5 6 FEATURES • TrenchFET® power MOSFET.
• TrenchFET® power MOSFET
• 100 % Rg tested
• Material categorization:
for definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS
• DC/DC converter
• Load switch
D1 S2
1 S1 Top View
2 G1
3 D2
Marking Code: RI
Ordering Information: Si1539DDL-T1-GE3 (lead (Pb)-free and halogen free)
G2 G1
S1 N-Channel MOSFET
D2 P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL N-CHANNEL
P-CHANNEL
Drain-Source Voltage
VDS 30
-30
Gate-Source Voltage
VGS ± 20
± 30
TC = 25 °C
0.7 -0.46
Continuous Drain Current (TJ = 150 °C)
TC = .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SI1539DL |
Vishay |
Complementary 30-V (D-S) MOSFET | |
2 | SI1539CDL |
Vishay |
N- and P-Channel 30 V (D-S) MOSFET | |
3 | SI1501DL |
Vishay Siliconix |
MOSFET | |
4 | SI1551DL |
Vishay Siliconix |
MOSFET | |
5 | SI1553CDL |
Vishay |
N- and P-Channel 20 V (D-S) MOSFET | |
6 | SI1553DL |
Vishay |
Complementary 2.5-V (G-S) MOSFET | |
7 | SI1555DL |
Vishay Siliconix |
MOSFET | |
8 | SI1557DH |
Vishay |
N- and P-Channel 1.8-V (G-S) MOSFET | |
9 | SI1563DH |
Vishay Siliconix |
Complementary 20-V (D-S) Low-Threshold MOSFET | |
10 | SI1563EDH |
Vishay Siliconix |
Complementary 20-V (D-S) Low-Threshold MOSFET | |
11 | SI1000 |
NTE Electronics |
(SI Series) SNAP-IN MOUNT ALUMINUM ELECTROLYTIC | |
12 | Si1000 |
Silicon Laboratories |
10-Bit ADC MCU |