Si1539DL Vishay Siliconix Complementary 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 30 rDS(on) (W) 0.480 @ VGS = 10 V 0.700 @ VGS = 4.5 V 0.940 @ VGS = -10 V ID (A) 0.63 0.52 -0.45 -0.33 P-Channel -30 1.700 @ VGS = -4.5 V SOT-363 SC-70 (6-LEADS) S1 1 6 D1 Marking Code RC G1 2 5 G2 XX YY Lot Traceability and Date Code Part # Code D2 3 4 S2.
sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71250 S-21374—Rev. B, 12-Aug-02 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 360 400 300 Maximum 415 460 350 Unit _C/W 2-1 Free Datasheet http://www.datasheet4u.com/ Si1539DL Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = -24 V, VGS = 0 V Zero Gate Voltage Drain Current ID.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SI1539DDL |
Vishay |
MOSFET | |
2 | SI1539CDL |
Vishay |
N- and P-Channel 30 V (D-S) MOSFET | |
3 | SI1501DL |
Vishay Siliconix |
MOSFET | |
4 | SI1551DL |
Vishay Siliconix |
MOSFET | |
5 | SI1553CDL |
Vishay |
N- and P-Channel 20 V (D-S) MOSFET | |
6 | SI1553DL |
Vishay |
Complementary 2.5-V (G-S) MOSFET | |
7 | SI1555DL |
Vishay Siliconix |
MOSFET | |
8 | SI1557DH |
Vishay |
N- and P-Channel 1.8-V (G-S) MOSFET | |
9 | SI1563DH |
Vishay Siliconix |
Complementary 20-V (D-S) Low-Threshold MOSFET | |
10 | SI1563EDH |
Vishay Siliconix |
Complementary 20-V (D-S) Low-Threshold MOSFET | |
11 | SI1000 |
NTE Electronics |
(SI Series) SNAP-IN MOUNT ALUMINUM ELECTROLYTIC | |
12 | Si1000 |
Silicon Laboratories |
10-Bit ADC MCU |