SI1416EDH - Vishay

SI1416EDH N-Channel MOSFET

New Product N-Channel 30 V (D-S) MOSFET Si1416EDH Vishay Siliconix PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.058 at VGS = 10 V 0.064 at VGS = 4.5 V 0.077 at VGS = 2.5 V ID (A)a 3.9 3.9 3.9 Qg (Typ.) 3.5 nC SOT-363 SC-70 (6-LEADS) D1 6D D2 G3 5D 4S Top View Marking Code YY AR XX Lot Traceability and Date Code Part # Code Ordering Information:.

Features

• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• Typical ESD Protection 1500 V in HBM
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC APPLICATIONS
• Portable Devices such as Smart Phones and Tablet PCs - DC/DC Converters - High Frequency Switching D - OVP Switch - Load Switch G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID Pulsed Drain Current (t = 300 µs) .