SGTP5T60SD1D - Silan Semiconductors

SGTP5T60SD1D 600V FIELD STOP IGBT

The SGTP5T60SD1D/F/S field stop IGBT features low conduction loss and switching loss, is applicable to UPS, SMPS, and PFC fields. FEATURES  5A, 600V, VCE(sat)(typ.)=1.5V@IC=5A  Low conduction loss  Fast switching  High input impedance C 2 1 G 3 E 1 3 12 3 TO-220F-3L 1 3 TO-263-2L NOMENCLATURE IGBT series Technical grade Current, 70: 70A N : N Chann.

Features

low conduction loss and switching loss, is applicable to UPS, SMPS, and PFC fields. FEATURES  5A, 600V, VCE(sat)(typ.)=1.5V@IC=5A  Low conduction loss  Fast switching  High input impedance C 2 1 G 3 E 1 3 12 3 TO-220F-3L 1 3 TO-263-2L NOMENCLATURE IGBT series Technical grade Current, 70: 70A N : N Channel NE : N-channel planar gate with ESD T : Field Stop 3/4 U : Field Stop 4+ V : Field Stop 5 W: Field Stop 6 X : Field Stop 7 SGT P 5 T 60 S D X 1 D Voltage, 65: 650V 120: 1200V Package D : TO-252 1,2,3… : Version No. Blank: Standard diode M : Standard Diode, full range R : Rapid Di.