SGT120R65AL - STMicroelectronics

SGT120R65AL PowerGaN transistor

The SGT120R65AL is a 650 V, 15 A e-mode PowerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency performances. Product status link SGT120R65AL Product summ.

Features

Order code VDS RDS(on) max. ID SGT120R65AL 650 V 120 mΩ 15 A
• Enhancement mode normally off transistor
• Very high switching speed
• High power management capability
• Extremely low capacitances
• Kelvin source pad for optimum gate driving
• Zero reverse recovery charge Series G-HEMT G(4) Applications KS(3) S(1,2) G4D5678S12KS3
• Adapters for tablets, notebook and AIO
• USB type-C PD adapters and quick chargers
• Wireless chargers Description The SGT120R65AL is a 650 V, 15 A e-mode PowerGaN transistor combined with a well established packaging technology. The resulting G-HEMT d.