SGT20N60NPFDF - Silan Microelectronics

SGT20N60NPFDF 600V IGBT

SGT20N60NPFDF using Punch Through IGBT technology, offer the optimum performance for induction Heating, UPS, SMPS and PFC application. FEATURES  20A, 600V, VCE(sat)(typ.) =1.8V@IC=20A  Low conduction loss  Fast switching  High input impedance  Low Cres/Cies NOMENCLATURE ORDERING INFORMATION Part No. SGT20N60NPFDF Package TO-220F-3L Marking 20N60NPFD.

Features

 20A, 600V, VCE(sat)(typ.) =1.8V@IC=20A  Low conduction loss  Fast switching  High input impedance  Low Cres/Cies NOMENCLATURE ORDERING INFORMATION Part No. SGT20N60NPFDF Package TO-220F-3L Marking 20N60NPFD Material Halogen free ABSOLUTE MAXIMUM RATINGS (TC = 25°, UNLESS OTHERWISE NOTED) Characteristics Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Pulsed Collector Current TC=25°C TC=100°C Maximum Power Dissipation (TC=25°C) -Derate above 25°C Operating Junction Temperature Range Storage Temperature Range Symbol VCE VGE IC ICM PD TJ Tstg Ratings 6.