SGT40T120FD3P7 - Silan

SGT40T120FD3P7 1200V IGBT

The SGT40T120FD3P7 IGBT is fabricated using Silan 4rd generation of trench field stop technology, features low conduction loss and switching loss, positive temperature coefficient for easy parallel operation. This device is applicable to induction heating, UPS, SMPS, and PFC fields. FEATURES  40A, 1200V, VCE(sat)(typ.)=2.3V@IC=40A  Low conduction loss  Ul.

Features

low conduction loss and switching loss, positive temperature coefficient for easy parallel operation. This device is applicable to induction heating, UPS, SMPS, and PFC fields. FEATURES  40A, 1200V, VCE(sat)(typ.)=2.3V@IC=40A  Low conduction loss  Ultra fast switching  High breakdown voltage NOMENCLATURE 1 G C 2 3 E 12 3 TO-247-3L IGBT series Current, 70: 70A N : N Channel NE : N-channel planar gate with ESD T : Field Stop 3/4 U : Field Stop 4+ V : Field Stop 5 W: Field Stop 6 X : Field Stop 7 Voltage, 65: 650V 120: 1200V SGT 40 T 120 F D 3 P7 ORDERING INFORMATION Part No. Package.