SGSP358 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE Voss RoS(on) 10 SGSP358 50 V 0.3 G 7A • HIGH SPEED SWITCHING APPLICATIONS • GENERAL PURPOSE • ULTRA FAST SWITCHING • EASY DRIVE FOR REDUCED COST AND SIZE INDUSTRIAL APPLICATIONS: • D.C. SWITCH • UNINTERRUPTIBLE POWER SUPPLIES N - channel enhancement mode POWER MaS field effect transistor..
e
(e) Pulse width limited by safe operating area
June 1988
5
50 50 ±20 7 4.4 28 28 50 0.4 -65 to 150 150
V V V A A A A W W/oC °C °C
1/5
505
SGSP358
THERMAL DATA
Rthj _case Thermal resistance junction-case
TL
Maximum lead temperature for soldering purpose
max
2.5
275
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Pa
·rameters
Test Conditions
OFF
,,
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SGSP351 |
STMicroelectronics |
N-CHANNEL POWER MOS TRANSISTORS | |
2 | SGSP301 |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
3 | SGSP311 |
STMicroelectronics |
N-CHANNEL POWER MOS TRANSISTORS | |
4 | SGSP316 |
STMicroelectronics |
N-CHANNEL POWER MOS TRANSISTORS | |
5 | SGSP317 |
STMicroelectronics |
N-CHANNEL POWER MOS TRANSISTORS | |
6 | SGSP319 |
STMicroelectronics |
N-CHANNEL POWER MOS TRANSISTORS | |
7 | SGSP321 |
STMicroelectronics |
N-CHANNEL POWER MOS TRANSISTORS | |
8 | SGSP322 |
STMicroelectronics |
N-CHANNEL POWER MOS TRANSISTORS | |
9 | SGSP330 |
STMicroelectronics |
N-CHANNEL POWER MOS TRANSISTORS | |
10 | SGSP341 |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
11 | SGSP361 |
STMicroelectronics |
N-CHANNEL POWER MOS TRANSISTORS | |
12 | SGSP362 |
STMicroelectronics |
N-CHANNEL POWER MOS TRANSISTORS |