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/ T 7 SCS-THOMSON [*03(m i(graKi(gS SGSP341 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP341 V DSS 400 V ^DS(on) 20 n b 0.6 A • HIGH SPEED SWITCHING APPLICATIONS • ULTRA FAST SWITCHING • EASY DRIVE FOR REDUCED COST AND SIZE INDUSTRIAL APPLICATIONS: • GENERAL PURPOSE N - channel enhancement mode POWER MOS field effect transistor. Easy dr.
ature
(
*) Pulse width limited by safe operating area
June 1988
400 400 ±20 0.6 0.4
1 .2
1.2 18 0.14 - 6 5 to 150 150
V V V A A A A W W /°C °C °C
1/5
SGSP341
THERMAL DATA
Rthj . Case Thermal resistance junction-case
TL
Maximum lead temperature for soldering purpose
max
6.8
°C/W
275
°C
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise specified)
Parameters
Test Conditions
Min. Typ. Max. Unit
OFF
V(br) dss Drain-source breakdown voltage
lD- 250 )iA
VGS= 0
400
lDSS Zero gate voltage
VDS= Max Rating
drain current (VGS= 0) VDS= Max Rating x 0.8 Tc = 125°C
lGSS
Gat.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SGSP301 |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
|
| 2 | SGSP311 |
STMicroelectronics |
N-CHANNEL POWER MOS TRANSISTORS |
|
| 3 | SGSP316 |
STMicroelectronics |
N-CHANNEL POWER MOS TRANSISTORS |
|
| 4 | SGSP317 |
STMicroelectronics |
N-CHANNEL POWER MOS TRANSISTORS |
|
| 5 | SGSP319 |
STMicroelectronics |
N-CHANNEL POWER MOS TRANSISTORS |
|
| 6 | SGSP321 |
STMicroelectronics |
N-CHANNEL POWER MOS TRANSISTORS |
|
| 7 | SGSP322 |
STMicroelectronics |
N-CHANNEL POWER MOS TRANSISTORS |
|
| 8 | SGSP330 |
STMicroelectronics |
N-CHANNEL POWER MOS TRANSISTORS |
|
| 9 | SGSP351 |
STMicroelectronics |
N-CHANNEL POWER MOS TRANSISTORS |
|
| 10 | SGSP358 |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
|
| 11 | SGSP361 |
STMicroelectronics |
N-CHANNEL POWER MOS TRANSISTORS |
|
| 12 | SGSP362 |
STMicroelectronics |
N-CHANNEL POWER MOS TRANSISTORS |
|