SGSP311 - STMicroelectronics

SGSP311 N-CHANNEL POWER MOS TRANSISTORS

SGSP311 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP311 Voss 100 V Ros(on) 0.30 10 11 A • HIGH SPEED SWITCHING APPLICATIONS • 100V FOR DCIDC CONVERTERS • RATED FOR UNCLAMPED INDUCTIVE SWITCHING (ENERGY TEST) • • ULTRA FAST SWITCHING • EASY DRIVE FOR REDUCED COST AND SIZE INDUSTRIAL APPLICATIONS: • SWITCHING MODE POWER SUPPLIES • STEPPER M.

Features

ion temperature (e) Pulse width limited by safe operating area
• Introduced in 1989 week 1 June 1988 100 100 ±20 11 7 30 75 0.6 -65 to 150 150 V V V A A A W W/oC °C °C 1/5 463 SGSP311 THERMAL DATA Rthj _case Thermal resistance junction-case TL Maximum lead temperature for soldering purpose max 1.67 275 ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified) Parameters Test Conditions OFF V(BR) oss Drain-source breakdown voltage 10 = 250 p,A VGS= 0 100 loss Zero gate voltage Vos= Max Rating drain current (VGS = 0) Vos= Max Rating x 0.8 Te = 125°C IGSS Gate-.