SFH487P - Siemens Semiconductor Group

SFH487P GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter 880 nm

Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlaβstrom Forward current Stoβstrom, τ ≤ 10 µs Surge current Verlustleistung Power dissipation Wärmewiderstand, freie Beinchenlänge max. 10 mm Thermal resistance, lead length between package bottom and PC-board m.

Features

q GaAIAs infrared emitting diode, fabricated in a liquid phase epitaxy process q High reliability q Small tolerance: Chip surface to case surface q High pulse handling capability q Good spectral match to silicon photodetectors q Plane surface q Same package as SFH 309 Applications q Photointerrupters q Fibre optic transmission Wechsellichtbetrieb bis 500 kHz q LWL Typ Type SFH 487 P Bestellnummer Ordering Code Q62703-Q517 Gehäuse Package 3-mm-LED-Gehäuse, plan, klares violettes EpoxyGieβharz, Anschlüsse im 2.54-mm-Raster (1/10’’), Anodenkennzeichnung: kürzerer Anschluβ 3 mm LED package (T .