GaAIAs-IR-Lumineszenzdioden (880 nm) GaAIAs Infrared Emitters (880 nm) SFH 484 SFH 485 Area not flat 0.6 9.0 8.2 0.4 7.8 7.5 Cathode 5.9 5.5 2.54 mm spacing 0.8 0.5 ø5.1 ø4.8 fex06271 1.8 1.2 29 27 Approx. weight 0.5 g 5.7 5.1 Chip position 0.6 0.4 GEX06271 Area not flat 0.6 9.0 Cathode 8.2 0.4 7.8 5.9 7.5 5.5 2.54 mm spacing 0.8 0.5 ø5.1 .
q Fabricated in a liquid phase epitaxy process q High reliability q Spect.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SFH480 |
Siemens Semiconductor Group |
GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm | |
2 | SFH481 |
Siemens Semiconductor Group |
GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm | |
3 | SFH482 |
Siemens Semiconductor Group |
GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm | |
4 | SFH483 |
OSRAM |
GaAlAs Infrared Emitter | |
5 | SFH483 |
Siemens Semiconductor Group |
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter | |
6 | SFH483E7800 |
OSRAM |
GaAlAs Infrared Emitter | |
7 | SFH484 |
Siemens Semiconductor Group |
GaAIAs Infrared Emitters | |
8 | SFH485P |
Siemens Semiconductor Group |
GaAIAs Infrared Emitter (880 nm) | |
9 | SFH486 |
Siemens Semiconductor Group |
GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter 880 nm | |
10 | SFH4860 |
Siemens Semiconductor Group |
GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode 660 nm | |
11 | SFH487 |
Siemens Semiconductor Group |
GaAIAs-IR-Lumineszenzdiode 880nm GaAIAs Infrared Emitter 880 nm | |
12 | SFH487P |
Siemens Semiconductor Group |
GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter 880 nm |