SFH4860 - Siemens Semiconductor Group

SFH4860 GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode 660 nm

Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlaßstrom Forward current Stoßstrom, tp = 10 µs, D = 0 Surge current Verlustleistung Power dissipation Wärmewiderstand Thermal resistance Symbol Symbol Wert Value – 55 ... + 125 125 3 50 1 140 450 160 Einheit Uni.

Features

q Radiation without IR in the visible red range q Cathode is electrically connected to the case q Very high efficiency q High reliability q Short switching time Applications q Photointerrupters q Hermetically sealed package Typ Type SFH 4860 Bestellnummer Ordering Code Q62702-P5053 Gehäuse Package 18 A3 DIN 41876 (TO-18), Bodenplatte, Plankappe, Anschlüsse im 2.54-mm-Raster (1/10’’), Anodenkennzeichnung: Nase am Gehäuseboden 18 A3 DIN 870 (TO -18), flat glass cap, lead spacing 2.54 mm (1/10’’), anode marking: projection at package bottom Semiconductor Group 1 1998-08-25 fmo06983 Flat g.