SEMiX302KH16s Absolute Maximum Ratings Symbol Chip IT(AV) ITSM i2t sinus 180° 10 ms 10 ms Tc = 85 °C Tc = 100 °C Tj = 25 °C Tj = 130 °C Tj = 25 °C Tj = 130 °C 300 230 9300 8000 432000 320000 1700 1600 1600 Tj = 130 °C Tj = 130 °C 130 1000 -40 ... 130 -40 ... 125 AC sinus 50Hz 1 min 1s 4000 4800 A A A A A2s A2s V V V A/µs V/µs °C °C V V Conditions Values U.
• Terminal height 17 mm
• Chips soldered directly to isolated substrate
Visol
Characteristics Symbol
Chip VT VT(TO) rT IDD;IRD tgd tgr tq IH IL VGT IGT VGD IGD Rth(j-c) Rth(j-c) Rth(j-c) Module Rth(c-s) Ms Mt a w 250 per chip per module to heat sink (M5) to terminals (M6) 3 2.5 0.045 5 5 5
* 9,81 K/W K/W Nm Nm m/s2 g Tj = 25 °C, IT = 900 A Tj = 130 °C Tj = 130 °C Tj = 130 °C, VDD = VDRM; VRD = VRRM Tj = 25 °C, IG = 1 A, diG/dt = 1 A/µs VD = 0.67
* VDRM Tj = 130 °C Tj = 25 °C Tj = 25 °C, RG = 33 Ω Tj = 25 °C, d.c. Tj = 25 °C, d.c. Tj = 130 °C, d.c. Tj = 130 °C, d.c. per thyristor per module s.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SEMIX302KH |
Semikron International |
Rectifier (Thryr./Diode) Module | |
2 | SEMIX302KD |
Semikron International |
Rectifier Diode Module | |
3 | SEMIX302KD16S |
Semikron International |
Rectifier Diode Module | |
4 | SEMIX302KT |
Semikron International |
Rectifier (Thryr./Diode) Module | |
5 | SEMIX302KT16S |
Semikron International |
Rectifier Thyristor Module | |
6 | SEMIX302GAL066HD |
Semikron International |
IGBT | |
7 | SEMIX302GAL066HD |
Semikron International |
IGBT | |
8 | SEMIX302GAL126HD |
Semikron International |
IGBT | |
9 | SEMIX302GAL12E4S |
Semikron International |
IGBT | |
10 | SEMIX302GAL12T4S |
Semikron International |
IGBT | |
11 | SEMiX302GAL17E4s |
Semikron |
IGBT | |
12 | SEMIX302GAR066HD |
Semikron International |
IGBT |