SEMIX302GAL12E4S - Semikron International

SEMIX302GAL12E4S IGBT

SEMiX302GAL12E4s SEMiX® 2s Trench IGBT Modules SEMiX302GAL12E4s Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognized, file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperature limited to TC=125°C max. .

Features

• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature coefficient
• High short circuit capability
• UL recognized, file no. E63532 Typical Applications
*
• AC inverter drives
• UPS
• Electronic Welding Remarks
• Case temperature limited to TC=125°C max.
• Product reliability results are valid for Tj=150°C
• Dynamic values apply to the following combination of resistors: RGon,main = 0,5  RGoff,main = 0,5  RG,X = 2,2  RE,X = 0,5  Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C ICnom ICRM ICRM = 3xIC.