SEMIX302KD16S - Semikron International

SEMIX302KD16S Rectifier Diode Module

SEMiX302KD16s Absolute Maximum Ratings Symbol IFAV IFSM i2t Conditions Tc = 85 °C Tc = 100 °C Tj = 25 °C Tj = 130 °C Tj = 25 °C Tj = 130 °C Values 300 240 8500 7500 361000 281000 1700 1600 -40 ... 130 -40 ... 125 Unit A A A A A2s A2s V V °C °C V V Recitifier Diode sin. 180° 10 ms 10 ms SEMiX 2s ® VRSM VRRM Tj Module Rectifier Diode Module SEMiX302KD1.

Features

• Terminal height 17 mm
• Chips soldered directly to isolated substrate Characteristics Symbol Diode VF V(TO) rT IRD Rth(j-c) Rth(j-c) Module Rth(c-s) Ms Mt a w 250 per chip per module to heat sink (M5) to terminals (M6) 3 2.5 0.045 5 5 5
* 9,81 K/W K/W Nm Nm m/s2 g Tj = 25 °C, IF = 900 A Tj = 130 °C Tj = 130 °C Tj = 130 °C, VRD = VRRM per diode per diode 0.091 1.6 0.85 1.1 15 V V mΩ mA K/W K/W sin. 180 K/W K/W Conditions min. typ. max. Unit Typical Applications
*
• Input Bridge Rectifier for AC/DC motor control
• Power supply KD © by SEMIKRON Rev. 26
  – 25.03.2010 1 SEMiX302KD16s Fig..