SDT10S60 - Infineon Technologies

SDT10S60 Silicon Carbide Schottky Diode

and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements compo.

Features

wer dissipation, TC=25°C Operating and storage temperature A²s V W °C Rev. 2.0 Page 1 2004-03-18 SDT10S60 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal www.DataSheet4U.com resistance, junction - ambient, leaded RthJC RthJA 2 62 K/W Symbol min. Values typ. max. Unit Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Diode forward voltage IF=10A, Tj=25°C IF=10A, Tj=150°C Symbol min. VF IR - Values typ. max. Unit V 1.5 1.7 34 85 1.7 2.1 µA 350 1500 Reverse current V R=600V, T j=25°C V R.