SDT10S30 - Infineon Technologies

SDT10S30 Silicon Carbide Schottky Diode

and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements compo.

Features

=25°C, tp=10ms Repetitive peak reverse voltage Surge peak reverse voltage Power dissipation, TC=25°C Operating and storage temperature i dt A²s V W °C VRRM VRSM Ptot Tj , Tstg -55... +175 Page 1 2001-12-04 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case SMD version, www.DataSheet4U.com device on PCB: P-TO263-3-2: @ min. footprint P-TO263-3-2: @ 6 cm2 cooling area 1) SDP10S30, SDB10S30 SDT10S30 Values min. typ. 35 max. 2.3 62 K/W Unit Symbol RthJC RthJA - Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Par.