SDT04S60 - Infineon Technologies

SDT04S60 Silicon Carbide Schottky Diode

and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements compo.

Features

IFRM IFMAX ∫i2dt VRRM VRSM Ptot Tj , Tstg Non repetitive peak forward current tp=10µs, TC=25°C i 2t value, TC=25°C, tp=10ms Repetitive peak reverse voltage Surge peak reverse voltage Power dissipation, TC=25°C Operating and storage temperature A²s V W °C -55... +175 Page 1 2004-02-11 www.DataSheet4U.com Final data SDP04S60, SDD04S60 SDT04S60 Values min. typ. 35 max. 4.1 62 62 75 50 K/W Unit Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: P-TO263-3-2: @ min. footprint P-TO2.