SDT02N02 - SamHop Microelectronics

SDT02N02 N-Channel MOSFET

Green Product SDT02N02 Ver 1.0 S a mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 200V F E AT UR E S S uper high dense cell design for low R DS (ON ). ID 2A R DS(ON) ( Ω) Typ 2.5 @ VGS=10V R ugged and reliable. S urface Mount P ackage. D G G S S SOT-223 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unl.

Features

ACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance b 200 1 ±100 uA nA VGS= ±30V , VDS=0V VDS=VGS , ID=250uA VGS=10V , ID=1A VDS=10V , ID=1A 2 3 2.5 1.8 4 3.1 V ohm S DYNAMIC CHARACTERISTICS CISS COSS CRSS Input Capacitance Output Capacitance Reverse Transfer Capacitance b VDS=25V,VGS=0V f=1.0MHz 240 38 8 pF pF pF SWITCHING CHARACTERISTICS tD(ON) tr tD(OFF) tf Qg Qgs Qgd Turn-On Delay Time Rise Tim.