SDT03N04 - SamHop Microelectronics

SDT03N04 N-Channel Enhancement Mode Field Effect Transistor

SDT03N04Green Product Sa mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor Ver 1.2 PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ 400V 1.5A 3.5 @ VGS=10V F E AT UR E S S uper high dense cell design for low R DS(ON). R ugged and reliable. S urface Mount P ackage. D G S SOT - 22 3 G S ABSOLUTE MAXIMUM RATINGS (TA=25°C unless.

Features

S Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current VGS=0V , ID=250uA VDS=320V , VGS=0V VGS= ±30V , VDS=0V 400 ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance VDS=VGS , ID=250uA VGS=10V , ID=1A VDS=10V , ID=1A 2 DYNAMIC CHARACTERISTICS c CISS Input Capacitance COSS CRSS Output Capacitance Reverse Transfer Capacitance VDS=25V,VGS=0V f=1.0MHz SWITCHING CHARACTERISTICS c tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd.