SDI150N12 - Sirectifier Semiconductors

SDI150N12 NPT IGBT Modules

SDI150N12 NPT IGBT Modules www.DataSheet4U.com Dimensions in mm (1mm = 0.0394") Absolute Maximum Ratings Symbol IGBT VCES IC ICRM VGES TVj,(Tstg) Conditions TC = 25oC, unless otherwise specified Values 1200 Units V A A V o TC= 25(80) C TC= 25(80)oC, tP =1ms _ Tstg TOPERATION < o 150(110) 300(220) _ +20 _ 40...+150(125) 2500 150(100) 300(220) 1100 20.

Features

1.4(1.6) 11(15) 2.5(3.1) 6.5 1 0.5 0.35(0.5) 160 80 400 70 13(11) 2(1.8) 8 35(50) 5(14) 320 160 520 100 max. 6.5 0.3 1.6(1.8) 14(19) 3(3.7) 8.5 1.5 0.6 20 Units V mA V m V nF nH m ns ns ns ns mJ V V m A uC mJ V V m A uC mJ K/W K/W K/W K/W Nm Nm g td(on) tr td(off) tf Eon(Eoff) Inverse Diode under following conditions: VF = VEC IF = 100A; VGE = 0V; Tj = 25(125)oC V(TO) Tj = 125oC rT Tj = 125oC IRRM IF = 100A; Tj = 25(125)oC Qrr di/dt = A/us Err VGE = V FWD under following conditions: VF = VEC IF = 100A; VGE = 0V; Tj = 25(125)oC V(TO) Tj = 125oC rT Tj = 125oC IRRM IF = 100A; Tj = 25oC Qrr di/d.