SDI100N12 - Sirectifier Semiconductors

SDI100N12 NPT IGBT Modules

SDI100N12 NPT IGBT Modules www.DataSheet4U.com Dimensions in mm (1mm = 0.0394") Absolute Maximum Ratings Symbol IGBT VCES IC ICRM VGES TVj,(Tstg) Conditions TC = 25oC, unless otherwise specified Values 1200 Units V A A V o TC= 25(80) C TC= 25(80)oC, tP =1ms _ Tstg TOPERATION < o 100(90) 200(180) _ +20 _ 40...+150(125) 2500 95(65) 200(180) 720 130(90.

Features

mA V m V nF nH m ns ns ns ns mJ V V m A uC mJ V V m A uC mJ K/W K/W K/W K/W Nm Nm g td(on) tr td(off) tf Eon(Eoff) Inverse Diode under following conditions: VF = VEC IF = 75A; VGE = 0V; Tj = 25(125)oC V(TO) Tj = 125oC rT Tj = 125oC IRRM IF = 75A; Tj = 25(125)oC Qrr di/dt = 800A/us Err VGE = V FWD under following conditions: VF = VEC IF = 75A; VGE = 0V; Tj = 25(125)oC V(TO) Tj = 125oC rT Tj = 125oC IRRM IF =75A; Tj = 25oC Qrr di/dt = A/us Err VGE = V Thermal Characteristics Rth(j-c) per IGBT Rth(j-c)D per Inverse Diode Rth(j-c)FD per FWD Rth(c-s) per module Mechanical Data Ms to heatsink M6 Mt.