SDI100S12 - Sirectifier Semiconductors

SDI100S12 SPT IGBT Modules

SDI100S12 SPT IGBT Modules www.DataSheet4U.com Dimensions in mm (1mm = 0.0394") Absolute Maximum Ratings Symbol IGBT VCES IC ICRM VGES TVj,(Tstg) Conditions TC = 25oC, unless otherwise specified Values 1200 Units V A A o TC= 25(80) C TC= 25(80)oC, tP =1ms _ Tstg TOPERATION < AC, 1min o 145(105) 290(210) _ +20 _ 40...+150(125) 4000 95(65) 290(210) 720.

Features

20) 1.9(2.1) 2.35(2.55) 6.2 0.74 0.71 0.75(1) 150 45 560 50 8.5(7.5) 2(1.8) 1.05 13 105 10.5 3.4 0.21 0.5 0.05 td(on) tr td(off) tf Eon(Eoff) Inverse Diode under following conditions: VF = VEC IF = 75A; VGE = 0V; Tj = 25(125)oC V(TO) Tj = 25(125)oC rT Tj = 25(125)oC IRRM IF = 75A; Tj = 125oC Qrr di/dt = 3100A/us Err VGE = V Thermal Characteristics Rth(j-c) per IGBT Rth(j-c)D per Inverse Diode Rth(c-s) per module Mechanical Data Ms to heatsink M6 Mt to terminals M5 w res., terminal-chip TC = 25(125) C under following conditions: VCC = 600V, IC = 50A RGon = RGoff = 15 , Tj = 125oC VGE = ± 15V .