SD57120 - ST Microelectronics

SD57120 RF POWER TRANSISTOR

The SD57120 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57120 is designed for high gain and broadband performance operating in common source mode at 28V. Its internal matching makes it ideal for base station application.

Features

emperature Value 65 ± 20 14 236 200 -65 to 150 4. Gate 5. Gate Uni t V V A W o o C C THERMAL DATA R th (j-c) Junction-Case Thermal Resistance 0.55 o C/W March 2000 1/7 SD57120 ELECTRICAL SPECIFICATION (Tcase = 25 oC) STATIC (Per Section) Symb ol V (BR)DSS I DSS I GSS V GS(Q) V DS( ON) G FS C I SS
* C OSS C RSS V GS = 0V V GS = 0V V GS = 20V V DS = 28V V GS = 10V V DS = 10V V GS = 0V V GS = 0V V GS = 0V Parameter I DS = 10 mA V DS = 28 V V DS = 0 V I D = 100 mA ID = 3 A ID = 3 A V DS = 28 V V DS = 28 V V DS = 28 V f = 1 MHz f = 1 MHz f = 1 MHz 3.0 0.7 3 175 44 1.7 Min. 65 1 1 5.0 0.8 Ty.