SD57030 - ST Microelectronics

SD57030 RF POWER TRANSISTOR

The SD57030 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57030 is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for base station applications requiring high lineari.

Features

0 Unit V V V A W °C °C THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance 1.75 °C/W 1/7 March, 24 2003 SD57030 ELECTRICAL SPECIFICATION (TCASE = 25°C) STATIC Symbol V(BR)DSS IDSS IGSS VGS(Q) VDS(ON) GFS CISS
* COSS CRSS VGS = 0 V VGS = 0 V VGS = 20 V VDS = 28 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V Test Conditions IDS = 10 mA VDS = 28 V VDS = 0 V ID = 50 mA ID = 3 A ID = 3 A VDS = 28 V VDS = 28 V VDS = 28 V f = 1 MHz f = 1 MHz f = 1 MHz 2.0 1.3 1.8 58 34 2.7 Min. 65 1 1 5.0 Typ. Max. Unit V µA µA V V mho pF pF pF Ref. 7143417B DYNAMIC Symbol POUT GPS ηD Load mismatch VDD .