SD57060-01 - ST Microelectronics

SD57060-01 RF POWER TRANSISTOR

The SD57060-01 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57060-01 is designed for high gain and broadband performance operating in common source mode at 28V. It is ideal for base station applications requiring high li.

Features

t V V A W o o C C THERMAL DATA (Tcase = 70 oC) R th (j-c) R th(c -s)
* Junction-Case Thermal Resistance Case-Heatsink T hermal Resistance 1.1 0.5 o o C/W C/W
* Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent). January 2000 1/8 SD57060-01 ELECTRICAL SPECIFICATION (Tcase = 25 oC) STATIC Symb ol V (BR)DSS I DSS I GSS V GS(Q) V DS( ON) G FS C ISS C OSS C RSS V GS = 0V V GS = 0V V GS = 20V V DS = 28V V GS = 10V V DS = 10V V GS = 0V V GS = 0V V GS = 0V Parameter IDS = 1 mA VDS = 28 V V DS = 0 V ID = 100 mA ID = 3 A ID = 3 A VDS .