SD56150 - STMicroelectronics

SD56150 RF POWER TRANSISTORS

The SD56150 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD56150 is designed for high gain and broadband performance operating in common source mode at 32 V. Its internal matching makes it ideal for TV broadcast applicatio.

Features

tion -Case Thermal Resistance November, 27 2002 PIN CONNECTION 12 5 1. Drain 2. Drain 3. Source 3 4 4. Gate 5. Gate Value 65 ± 20 17 236 200 -65 to +150 0.55 Unit V V A W °C °C °C/W 1/8 SD56150 ELECTRICAL SPECIFICATION (TCASE = 25 °C) STATIC (Per Section) Symbol Test Conditions V(BR)DSS VGS = 0 V IDS = 10 mA IDSS VGS = 0 V VDS = 28 V IGSS VGS = 20 V VDS = 0 V VGS(Q) VDS = 28 V ID = 100 mA VDS(ON) VGS = 10 V ID = 3 A GFS VDS = 10 V ID = 3 A CISS
* VGS = 0 V VDS = 28 V f = 1 MHz COSS VGS = 0 V VDS = 28 V f = 1 MHz CRSS VGS = 0 V
* Includes Internal Input Mosc.