The SD56120M is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD56120M is designed for high gain and broadband performance operating in common source mode at 32 V. Its internal matching makes it ideal for TV broadcast applicat.
■ Excellent thermal stability
■ Common source configuration Push-pull
■ POUT = 120W with 13dB gain @ 860MHz / 32V
■ BeO free package
■ Internal input matching
Description
The SD56120M is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD56120M is designed for high gain and broadband performance operating in common source mode at 32 V. Its internal matching makes it ideal for TV broadcast applications requiring high linearity.
M252 Epoxy sealed
Pin connection
12
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SD56120 |
ST Microelectronics |
RF POWER TRANSISTORS | |
2 | SD5610 |
Honeywell Sensing |
(SD5600 / SD5610) Optoschmitt Detector | |
3 | SD5610 |
ETC |
(SD5xxx) Sensor - Hermetic Optoschmitts | |
4 | SD5614 |
ETC |
(SD5xxx) Sensor - Hermetic Optoschmitts | |
5 | SD56150 |
STMicroelectronics |
RF POWER TRANSISTORS | |
6 | SD560 |
Dc Components |
(SD520 - SD5100) TECHNICAL SPECIFICATIONS OF SCHOTTKY BARRIER RECTIFIER | |
7 | SD5600 |
Honeywell Sensing |
(SD5600 / SD5610) Optoschmitt Detector | |
8 | SD5600 |
ETC |
(SD5xxx) Sensor - Hermetic Optoschmitts | |
9 | SD5604 |
ETC |
(SD5xxx) Sensor - Hermetic Optoschmitts | |
10 | SD56060 |
STMicroelectronics |
RF power transistor | |
11 | SD560B |
Sangdest Microelectronics |
STANDARD RECTIFIER | |
12 | SD560BP |
Sangdest Microelectronics |
STANDARD RECTIFIER |