SD56120 - ST Microelectronics

SD56120 RF POWER TRANSISTORS

The SD56120 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD56120 is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for broadcast applications from 470 to 860 MHz requi.

Features

■ Excellent thermal stability
■ Common source configuration Push-pull
■ POUT = 100 W with 14 dB gain @ 860 MHz
■ BeO-free package Description The SD56120 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD56120 is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for broadcast applications from 470 to 860 MHz requiring high linearity. M246 Epoxy sealed Figure 1. Pin connections 12 Table 1. Device summary Ord.