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The SD1429-03 is a 12.5V epitaxial silicon NPN planar transistor designed primarily for UHF communications. It withstands infinite VSWR at rated operating conditions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCBO VCEO VCES VEBO IC Ptot TJ TSTG Parameter Value 36 16 36 4.0 3.4 37.5 +200 -65 to +150 Unit V V V V W A °C °C Collector-Base Voltage Col.
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• 470 MHz 12.5 VOLTS POUT = 15.0 WATTS GP = 7.5 dB MINIMUM COMMON EMITTER CONFIGURATION
DESCRIPTION:
The SD1429-03 is a 12.5V epitaxial silicon NPN planar transistor designed primarily for UHF communications. It withstands infinite VSWR at rated operating conditions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
VCBO VCEO VCES VEBO IC Ptot TJ TSTG
Parameter
Value
36 16 36 4.0 3.4 37.5 +200 -65 to +150
Unit
V V V V W A °C °C
Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperatur.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SD1429-3 |
Microsemi Corporation |
RF AND MICROWAVE TRANSISTORS |
|
| 2 | SD1429 |
Microsemi Corporation |
RF AND MICROWAVE TRANSISTORS |
|
| 3 | SD1429 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS |
|
| 4 | SD1429 |
SGS-Thomson |
RF AND MICROWAVE TRANSISTORS |
|
| 5 | SD1420 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS |
|
| 6 | SD1420 |
Microsemi Corporation |
RF & MICROWAVE TRANSISTORS |
|
| 7 | SD1420-01 |
Advanced Power Technology |
RF AND MICROWAVE TRANSISTORS |
|
| 8 | SD1422 |
Microsemi Corporation |
RF AND MICROWAVE TRANSISTORS |
|
| 9 | SD1422 |
Advanced Power Technology |
RF AND MICROWAVE TRANSISTORS |
|
| 10 | SD1423 |
STMicroelectronics |
RF AND MICROWAVE TRANSISTORS |
|
| 11 | SD1424 |
ST Microelectronics |
RF & MICROWAVE TRANSISTORS 800-900 MHz BASE STATION APPLICATIONS |
|
| 12 | SD1425 |
Advanced Semiconductor |
RF AND MICROWAVE TRANSISTORS |
|