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The MS1429-03 is an epitaxial silicon NPN planar transistor designed for broadband applications in the 450-512MHz land Mobile radio band. This device utilizes diffused emitter resistors to withstand 20:1 VSWR at rated operating conditions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Symbol VCBO VCEO VCES VEBO IC Ptot TJ T STG Parameter Collector-Base Voltage.
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• 470 MHz 12.5 VOLTS POUT = 25.0 WATTS GP = 6.2 dB MINIMUM COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1429-03 is an epitaxial silicon NPN planar transistor designed for broadband applications in the 450-512MHz land Mobile radio band. This device utilizes diffused emitter resistors to withstand 20:1 VSWR at rated operating conditions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C)
Symbol
VCBO VCEO VCES VEBO IC Ptot TJ T STG
Parameter
Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temper.
SD1422 - Microsemi Corporation
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SD1420 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS |
|
| 2 | SD1420 |
Microsemi Corporation |
RF & MICROWAVE TRANSISTORS |
|
| 3 | SD1420-01 |
Advanced Power Technology |
RF AND MICROWAVE TRANSISTORS |
|
| 4 | SD1423 |
STMicroelectronics |
RF AND MICROWAVE TRANSISTORS |
|
| 5 | SD1424 |
ST Microelectronics |
RF & MICROWAVE TRANSISTORS 800-900 MHz BASE STATION APPLICATIONS |
|
| 6 | SD1425 |
Advanced Semiconductor |
RF AND MICROWAVE TRANSISTORS |
|
| 7 | SD1428 |
SGS-Thomson |
(SD1xxx) Transistors |
|
| 8 | SD1429 |
Microsemi Corporation |
RF AND MICROWAVE TRANSISTORS |
|
| 9 | SD1429 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS |
|
| 10 | SD1429 |
SGS-Thomson |
RF AND MICROWAVE TRANSISTORS |
|
| 11 | SD1429-03 |
Advanced Power Technology |
RF AND MICROWAVE TRANSISTORS |
|
| 12 | SD1429-3 |
Microsemi Corporation |
RF AND MICROWAVE TRANSISTORS |
|