Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
The SD1424 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation in cellular base station application. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter VCBO VCES VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-.
heet4U.com SD1424 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVCEO BVEBO I CBO hFE DYNAMIC Symbol IC = 50mA IC = 20mA IE = 5mA VCB = 24V VCE = 10V IE = 0mA IB = 0mA IC = 0mA IE = 0mA IC = 100mA 48 25 3.5 — 20 50 30 4.0 — — — — — 1.0 100 V V V mA — Test Conditions Value Min. Typ. Max. Unit POUT GP ηc COB Note: I CQ f = 960 MHz f = 960 MHz f = 960 MHz f = 1 MHz = 150mA PIN = 5.3 W POUT = 30 W POUT = 30 W VCB = 24 V VCC = 24 V VCC = 24 V VCC = 24 V (each side) 30 7.5 45 — — — 50 20 — — — 24 W dB % pF TYPICAL PERFOR.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SD1420 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS |
|
| 2 | SD1420 |
Microsemi Corporation |
RF & MICROWAVE TRANSISTORS |
|
| 3 | SD1420-01 |
Advanced Power Technology |
RF AND MICROWAVE TRANSISTORS |
|
| 4 | SD1422 |
Microsemi Corporation |
RF AND MICROWAVE TRANSISTORS |
|
| 5 | SD1422 |
Advanced Power Technology |
RF AND MICROWAVE TRANSISTORS |
|
| 6 | SD1423 |
STMicroelectronics |
RF AND MICROWAVE TRANSISTORS |
|
| 7 | SD1425 |
Advanced Semiconductor |
RF AND MICROWAVE TRANSISTORS |
|
| 8 | SD1428 |
SGS-Thomson |
(SD1xxx) Transistors |
|
| 9 | SD1429 |
Microsemi Corporation |
RF AND MICROWAVE TRANSISTORS |
|
| 10 | SD1429 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS |
|
| 11 | SD1429 |
SGS-Thomson |
RF AND MICROWAVE TRANSISTORS |
|
| 12 | SD1429-03 |
Advanced Power Technology |
RF AND MICROWAVE TRANSISTORS |
|