1 S1 2 G1 3 n/c 4 n/c 5 G2 6 S2 7 AC 8 N 9 P SD11957 SiC Half-Bridge Power Module - 1 VDS = 1200V RDSon = 13mΩ ID = 105A @ TC = 25°C FEATURES & BENEFITS • SUPERIOR SYSTEM EFFICIENCY DUE TO LOW SWITCHING AND CONDUCTIONS LOSSES OF SIC • OUTSTANDING POWER CONVERSION EFFICIENCY AT HIGH FREQUENCY OPERATION • HIGH SPEED SWITCHING W/ LOW CAPACITA.
& BENEFITS
• SUPERIOR SYSTEM EFFICIENCY DUE TO LOW SWITCHING AND CONDUCTIONS LOSSES OF SIC
• OUTSTANDING POWER CONVERSION EFFICIENCY AT HIGH FREQUENCY OPERATION
• HIGH SPEED SWITCHING W/ LOW CAPACITANCE
• REDUCED PARASITIC INDUCTANCE AND CAPACITANCE
• REAL KELVIN SOURCE CONNECTION FOR STABLE GATE DRIVE
• ISOLATED BACKSIDE FOR DIRECT MOUNT TO HEATSINK
• ALN SUBSTRATE AND CUMO BASEPLATE FOR THERMAL CONDUCTIVITY
• HIGH JUNCTION TEMPERATURE OPERATION
• LOW JUNCTION TO CASE THERMAL RESISTANCE
• REDUCED THERMAL REQUIREMENTS AND SYSTEM COST
• RUGGED MOUNTING DUE TO INTEGRATED MOUNTING BUSHINGS
• LOW .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SD11902 |
Solitron Devices |
SiC Half-Bridge Power Module | |
2 | SD11910 |
Solitron Devices |
SiC Half-Bridge Power Module | |
3 | SD11912 |
Solitron Devices |
SiC Dual MOSFET Power Module | |
4 | SD1100 |
ETC |
N CHANNEL ENHANCEMENT MODE HIGH VOLTAGE D MOS POWER FETS | |
5 | SD1100C |
International Rectifier |
STANDARD RECOVERY DIODES Hockey Puk Version | |
6 | SD1100P |
TSC |
(SD120P - SD1100P) Schottky Barrier Rectifiers | |
7 | SD1115 |
SGS-Thomson |
(SD1xxx) Transistors | |
8 | SD1127 |
SGS-Thomson |
(SD1xxx) Transistors | |
9 | SD1133 |
SGS-Thomson |
(SD1xxx) Transistors | |
10 | SD1134 |
SGS-Thomson |
(SD1xxx) Transistors | |
11 | SD1135 |
SGS-Thomson |
(SD1xxx) Transistors | |
12 | SD11428 |
Solitron Devices |
1200V Silicon Carbide IGBT |