SD11910 - Solitron Devices

SD11910 SiC Half-Bridge Power Module

1 S1 2 G1 3 Temp. Monitoring 4 Temp. Monitoring 5 G2 6 S2 7 AC 8 N 9 P SD11910 SiC Half-Bridge Power Module - 1 VDS = 1200V RDSon = 8mΩ ID = 120A @ TC = 25°C FEATURES & BENEFITS • SUPERIOR SYSTEM EFFICIENCY DUE TO LOW SWITCHING AND CONDUCTIONS LOSSES OF SIC • OUTSTANDING POWER CONVERSION EFFICIENCY AT HIGH FREQUENCY OPERATION • HIGH SPEED .

Features

& BENEFITS
• SUPERIOR SYSTEM EFFICIENCY DUE TO LOW SWITCHING AND CONDUCTIONS LOSSES OF SIC
• OUTSTANDING POWER CONVERSION EFFICIENCY AT HIGH FREQUENCY OPERATION
• HIGH SPEED SWITCHING W/ LOW CAPACITANCE
• REDUCED PARASITIC INDUCTANCE AND CAPACITANCE
• REAL KELVIN SOURCE CONNECTION FOR STABLE GATE DRIVE
• ISOLATED BACKSIDE FOR DIRECT MOUNT TO HEATSINK
• ALN SUBSTRATE AND CUMO BASEPLATE FOR THERMAL CONDUCTIVITY
• HIGH JUNCTION TEMPERATURE OPERATION
• LOW JUNCTION TO CASE THERMAL RESISTANCE
• REDUCED THERMAL REQUIREMENTS AND SYSTEM COST
• INTEGRATED NTC TEMPERATURE SENSOR
• RUGGED MOUNTING DUE TO.