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1 KS1 2 G1 3 Temp. Monitoring 4 Temp. Monitoring 5 G2 6 KS2 7 D2 8 S2 9 S1 10 D1 SD11912 SiC Dual MOSFET Power Module - 1 VDS = 1200V RDSon = 13mΩ ID = 105A @ TC = 25°C FEATURES & BENEFITS • SUPERIOR SYSTEM EFFICIENCY DUE TO LOW SWITCHING AND CONDUCTIONS LOSSES OF SIC • OUTSTANDING POWER CONVERSION EFFICIENCY AT HIGH FREQUENCY OPERATION .
& BENEFITS
• SUPERIOR SYSTEM EFFICIENCY DUE TO LOW SWITCHING AND CONDUCTIONS LOSSES OF SIC
• OUTSTANDING POWER CONVERSION EFFICIENCY AT HIGH FREQUENCY OPERATION
• HIGH SPEED SWITCHING W/ LOW CAPACITANCE
• REDUCED PARASITIC INDUCTANCE AND CAPACITANCE
• REAL KELVIN SOURCE CONNECTION FOR STABLE GATE DRIVE
• ISOLATED BACKSIDE FOR DIRECT MOUNT TO HEATSINK
• ALN SUBSTRATE AND CUMO BASEPLATE FOR THERMAL CONDUCTIVITY
• HIGH JUNCTION TEMPERATURE OPERATION
• LOW JUNCTION TO CASE THERMAL RESISTANCE
• REDUCED THERMAL REQUIREMENTS AND SYSTEM COST
• INTEGRATED NTC TEMPERATURE SENSOR
• RUGGED MOUNTING DUE TO.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SD11910 |
Solitron Devices |
SiC Half-Bridge Power Module |
|
| 2 | SD11902 |
Solitron Devices |
SiC Half-Bridge Power Module |
|
| 3 | SD11957 |
Solitron Devices |
SiC Half-Bridge Power Module |
|
| 4 | SD1100 |
ETC |
N CHANNEL ENHANCEMENT MODE HIGH VOLTAGE D MOS POWER FETS |
|
| 5 | SD1100C |
International Rectifier |
STANDARD RECOVERY DIODES Hockey Puk Version |
|
| 6 | SD1100P |
TSC |
(SD120P - SD1100P) Schottky Barrier Rectifiers |
|
| 7 | SD1115 |
SGS-Thomson |
(SD1xxx) Transistors |
|
| 8 | SD1127 |
SGS-Thomson |
(SD1xxx) Transistors |
|
| 9 | SD1133 |
SGS-Thomson |
(SD1xxx) Transistors |
|
| 10 | SD1134 |
SGS-Thomson |
(SD1xxx) Transistors |
|
| 11 | SD1135 |
SGS-Thomson |
(SD1xxx) Transistors |
|
| 12 | SD11428 |
Solitron Devices |
1200V Silicon Carbide IGBT |
|